| PART |
Description |
Maker |
| CW201212-R33J CW201212-12NJ CW201212-R56J CW201212 |
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.91 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Inductor Type:High Frequency; Inductance:13.3nH; Inductance Tolerance: /- 5 %; Current Rating:600mA; Series:CW201212; Package/Case:0805; Core Material:Alumina Ceramic; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| BDP947 BDP949 Q62702-D1337 Q62702-D1335 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BCP72 |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SB1202L-X-T6C-K 2SB1202L-X-TM3-T 2SB1202L-R-TN3-K |
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-252
HIGH CURRENT SWITCHING APPLICATION 大电流开关应
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-251
|
UTC[Unisonic Technologies]
友顺科技股份有限公司
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
|
| BTS740S2 BTS740-S2 |
Smart High Side Switches - 5,0-34V, 2x30mΩ Limit(scr) 24A DSO-20-9
Smart High-Side Power Switch Two Channels: 2 x 30m Current Sense
Smart High-Side Power Switch Two Channels: 2 x 30mз Current Sense
|
Infineon Technologies AG
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| RSBL-12 RSBL-9 RSBL-9-S RSB-12 RSB-12-S RSB-24 RSB |
Using Permanent Magnet, High sensitivity Two Poles Signal Relay RSB RELAYS 使用永磁，两极高灵敏度信号继电器RSB继电
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% 使用永磁，两极高灵敏度信号继电器RSB继电
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
Explosion-Proof Limit Switches Series CX: Standard Housing: Side Rotary, Lever not included
From old datasheet system
|
Electronic Theatre Controls, Inc.
ETC[ETC]
N.A.
List of Unclassifed Manufacturers
http://
|
| BUX81 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| 2SD1411A EE08318 |
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)
From old datasheet system
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
| HS-1410RH 5962F9851801VXC HS9-1410RH-Q |
Radiation Hardened/ High Speed/ Low Power/ Current Feedback Op Amp with Output Disable
CAP 4-ARRAY 47000PF 16V X7R 1206
Radiation Hardened, High Speed, Low
Power, Current Feedback Op Amp with
Output Disable(抗辐射高速、低功耗电流反馈放大器（输出禁止）)
Radiation Hardened, High Speed, Low Power, Current Feedback Op Amp with Output Disable OP-AMP, PDFP10
|
Intersil Corporation
Intersil, Corp.
|
